Mitsubishi 2SC2630 C2630 RF POWER TRANSISTOR
Mitsubishi 2SC2630 C2630 NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
Type Designator: 2SC2630
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 17 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 14 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 17 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 14 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
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- Warranty: 1 year warranty, 30 days returns policy.
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- 90 day guarantee to meet all new original factory specs fit form and function.
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